Optimization of the priming procedure for Thermally Stimulated Currents with heavily irradiated silicon detectors
نویسندگان
چکیده
We report on the investigation of the radiation damage induced by neutron irradiation on both nand p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 10 14 -10 16 n/cm 2 . Priming conditions have been studied in detail in order to investigate the residual electric field due to frozen charged traps after the priming step and its influence on the TSC emission. Zero bias TSC measurements have also been performed as an additional tool to study the defects distribution and the residual electric field. The electric field distribution inside the sample and its effect on the TSC emission are qualitatively explained by a band diagrams description.
منابع مشابه
Correlation between a deep hole trap and the reverse annealing effect in neutron - irradiated silicon detectors ♣
We report on a correlation between a deep hole trap observed by TSC (Thermally Stimulated Current) and the so-called reverse annealing effect of the effective doping concentration in neutron-irradiated silicon detectors.
متن کاملInvestigation of Carrier Transport in GaN Single Crystals and Radiation Detectors by Thermally Stimulated Methods
We investigated single crystals of GaN and thin film GaN radiation detectors by thermally stimulated currents and thermally stimulated depolarization methods in order to characterize carrier transport properties as influenced by material defect structure. In thick GaN no expressed structure of the thermally stimulated current spectra was observed in the temperature range from 100 K up to 350 K,...
متن کاملThe Electric Field in Irradiated Silicon Detectors
The electric eld distribution inside heavily irradiated silicon particle detectors is deduced using observations of particle and MIP signals. In these detectors particle signals are observed for both p and n side illumination even when the detector is only partially depleted . The observations indicate that the electric eld distribution within the detector has the contribution expected from a u...
متن کاملCzochralski silicon detectors irradiated with 24GeV=c and 10MeV protons
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV=c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradi...
متن کاملCapacitance-Voltage analysis at different temperatures in heavily irradiated silicon detectors
The main operational parameter of a silicon detector is the charge collected at the electrodes when a particle is impinging on the device. The collected charge should reach its maximum when the detector is fully depleted. Thus it is of major importance to determine the full depletion voltage of the detector before and after irradiation with fast hadron fluence (Φ ). The measurement of the full ...
متن کامل